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簡介：中國近代第一所大學FOUNDEDIN1895天率大薯TLANJINUNLVERSLTY碩士學位論文學科專業(yè)作者姓名指導教師微電子學與國體電子學王修遠毛陸虹教授天津大學研究生院2006年1月ABSTRACTPHASELOEKEDLOOPPLLISONEOFTHEMOSTIMPORTANTPARTOFCURRENTSOCCHIPSANDINCREASINGLYUSEDINCOMMUNICATIONANDMICROPROCESSORSYSTEMS．WITHTHEIMPROVINGOFTHESESYSTEMS，MUCHMORESTRINGENTREQUIREMENTSHAVEBEENPLACEDONTHEDESIGNOFPLLSYSTEM．HOWEVER,TODESIGNAPLLISDIFFICULTANDWILLTAKEALONGTIMETOSIMULATION．ITHASBEENAPROBLEMINANALOGICDESIGN．INTHISTHESISAWHOLEPLLISDISCUSSEDINO，35URNRFCMOSPROCESS．ITWORKSAT3．3VWITHOUTPUTRANGEOF64MHZ一240MHZ．ITSSTEPIS4MHZ．INTHISDESIGN，ATOPDOWNDESIGNTECHNOLOGYISUSED，WHICHBEGINS、VITHSYSTEMDESIGN，DOWNTOLAYOUTDESIGN．FIRST，PLL’SBEHAVIORMODELISBUILDUPINVERILOGALANGUAGE，ANDTHEPARAMETEROFTHEFULLSYSTEMWASCHOSENANDOPTIMIZED．EVERYBLOCK’SSTRUCTUREISCHOSENACCORDINGTOTHEMODULEPARAMETER,ANDEVERYBLOCKISDESIGNEDANDSIMULATEDCAREFULLY．THENWHOLESYSTEMISANALYZEDUNDERDIFFERENTCONDITION．FROMTHESIMULATIONWECANCONCLUDETHATALLTHEMODULEANDPLLSYSTEMPASSEDTHEDESIGNREQUIREMENT．AFTERFINISHINGSIMULATING，EVERYBLOCK’SLAYOUTISFINISHEDANDTAPEDINCHARTERD．THETESTINGRESULTSINDICATETHEMODULETESTEDWORKSWELL，ACHIEVESDESIGNREQUIREMENTSBASICALLY．111ECHIPHASSOMEPRACTICALVALUE．KEYWORDSPLL，VCO，CHARGEPUMP，

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簡介：湖南大學碩士學位論文025ΜMCMOS工藝24GHZ低噪聲放大器及壓控振蕩器設計姓名鄧建元申請學位級別碩士專業(yè)微電子學與固體電子學指導教師謝中20050304ABSTRACTWITHTHEDEVELOPMENTOFTHETECHNOLOGYOFWIRELESSCOMMUNICATION，THEDREAMOFDATACOMMUNICATIONANYWHEREANDANYTIMEHASBEENREALIZEDPRIMARILY．ATTHESAMETIME，THEDEMANDHASBEENONAGREATUPSURGEFORHIGHERRATE，LARGERCAPABILITYANDHIGHERPERFORMANCEOFWIRELESSCOMMUNICATIONSYSTEMS．UNDERSUCHCIRCUMSTANCES，RESEARCHESINTHEFIELDOFRADIOANDWIRELESSCOMMUNICATIONICBECOMEMOREANDMOREACTIVE．NOWTHEREEXISTSEVERALKINDSOFWIRELESSDATACOMMUNICATIONSTANDARD，F(xiàn)OREXAMPLE，IN2．4GHZISMBANDTHEREARE802．11B／GSTANDARD，BLUETOOTHANDHOMERFETC．WITHTHEPROGRESSOFCMOSTECHNOLOGY，THECHARACTERISTICSIZEISSHRINKING，WHICHCANMEETTHEREQUIREMENTSOFSEVERALTENGHZRFIC．ATTHESAMETIME，THEIMPROVEMENTOFDEVICEMODEL，THEAPPEARANCEOFHIGHPERFORMANCEPASSIVEICDEVICEANDESPECIALLYTHEREALIZATIONOFINDUCTORSINCHIPMAKETHERFFRONTBACKFUNCTIONCIRCUITSINTEGRATINGINTOSINGLECHIPPOSSIBLE．SO，THECOMPETITIONABILITYOFCMOSTECHNOLOGYINRFICISLARGELYENHANCEDBYALLOFTHESEPROGRESSES．INTHISTHESISITISPRESENTEDTHATTHEDESIGNOFLNAANDVCOFOR1EEE802．1LB／GWLANRECEIVERINAO．25UMCMOSPROCESS．FORTHE2．4GHZRECEIVERTHERFISTUNABLEFROM2．4TO2．483GHZANDTHEIFIS480MHZ．THEINDUCTORANDCAPACITORINCMOSPROCESSISANIMPORTANTISSUEINDESIGNINGLNAANDVC0．THEMODELOFINDUCTORANDCAPACITORAREINTRODUCEDINTHEFIRST．WITHTHEHELPOFSOFTWAREASITIC，DIFFERENTKINDSOFINDUCTORSARESIMULATEDTOFITTHEREQUIREMENTOFTHEDESIGN．STARTINGFROMTHENOISEANALYSIS，THERELATIONSHIPOFTHENOISEFACTOROFCIRCUITANDTHEWIDTHOFMOSFETISDEDUCED，WHICHISQUITEIMPORTANTFORLNA．INTHEVCODESIGNING，THEMODELOFLINEARTIMEDEPENDENTNOISEISADOPTEDTOCALCULATETHEPHASENOISE．THEQUANTITATIVERELATIONSHIPOFPHASENOISEANDOTHERPARAMETERSISOBTAINED．TOSOLVETHECONTRADICTIONOFGAINANDTUNINGRANGEOFVCO，THESELFADJUSTEDDISCRETEVCOISINTRODUCED，BYWHICHTHEGAINANDPHASENOISEOFVCOCANBELARGELYDECREASEDINWIDETUNINGRANGE．TOREACHBETTERPERFORMANCEOFCIRCUIT，THEBIASCIRCUITOFBANDGAPREFERENCEISADOPTEDWHICHMAKESTHEBIASVOLTAGEANDCURRENTINDEPENDENTOFTHEPOWERSUPPLYANDTEMPERATURE．SEVERALKEYSIMULATIONRESULTSAREACHIEVEDINTHEWORKOFTHETHESISTHEVOLTAGECONTROLOSCILLATORVCOHASANOUTPUTFREQUENCYRANGEFROM1．8TO2．28GHZWITHII

簡介：目錄摘要．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．1ABSTRACL?????．．．．．．．．?????．．．．??．．2第一章前言．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．3§1．1課題背景一半導體制造業(yè)的發(fā)展??????????????．3§1．2研究目的一開發(fā)并優(yōu)化新工藝的意義????????????．5§1．3論文結構?????????????????????????6第二章干法刻蝕回顧．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．．7§2．1干法刻蝕原理??????????????????????．7§2．2側壁SPACER在工藝流程中的作用????????????．15第三章半導體中實驗設計DOE方法???????．16§3．1實驗設計DOE的原理和方法??????????????．．16§3．2實驗檢測工具和分析工具?????????????????16第四章O．18微米側壁SPACER刻蝕工藝的開發(fā)和優(yōu)化．??．．19§4．1O．18微米側壁SPACER工藝概述??????????????19§4．20．18微米側壁SPACER現(xiàn)有工藝存在的問題????????．19§4．3在DPSPLUS設備上的工藝優(yōu)化???????????????．．22§4．3．1使用新工藝氣體SF6進行工藝開發(fā)??????????．22§4．3．2改變硅片背面氦氣壓力進行工藝優(yōu)化?????????～38§4．3．3改變工藝氣體CF4的組成進行工藝優(yōu)化????????．．42第五章結論????????????．??．．63參考文獻????????????????66致謝?????????????????67ABSTRACTTHISTHESISMAINLYFOCUSESONTHEDEVELOPMENTOFAREETCHINGPROCESSFOR0．18URNSPACER．IMPROVINGPREVIOUSDRYETCHINGPROCESS，WESUCCESSFULLYDEVELOPEDNEWETCHPROCESSBYTAKINGUSEOFOURCOMPANY’SCURRENTMACHINESANDLOCALRESOURCEACCORDINGTO0．18UMSPACERETCHHAVESMALLFOOTINDENSELINE，WEDISCOVEREDSOMEPROBLEMSBASINGOLLEXISTINGMACHINESANDPROCESSTECHNOLOGY．THEMAINPROBLEMSALETHELOWETCHRATESELECTIVITYCAUSINGOVERETCHONTHETOPOXIDEOFGATEANDTHELOWETCHRATEUNIFORMITYCAUSINGSPACERPROFILETAPEREDANDCDSMALLER．SOWEDOIMPROVEMENTMAINLYINTHREEAPPROACHESASFOLLOWSFIRSTLY,WEUSEDPSPLUSTOOLINSTEADOFDPSTOOLINORDERTOINCREASENEWETCHINGGASSF6．AFTERWARDSWEIMPROVEETCHRATESELECTIVITY,UNIFORMITYANDALSOIMPROVEPROFILE，CDOFSPACERBUTONTHEGATE，SOMENITRIDEREMAINEDSECONDLY,WECHANGEDBACKSIDEHELIUMPRESSURETOIMPROVEETCHRATEUNIFORMITY．FUNHENNORCWEOBSERVEDTHETHICKNESSOFOXIDEREMAINED，BUTONTHEGATE，SOMENITRIDESTILLREMAINED．FINALLY,BYADJUSTTHEGASFLOWRATIOOFCF4ANDCHF3，WEDEVELOPEDSOMENEWETCHRECIPESWHICHHASHIGHETCHRATEUNIFORMITYANDSELECTIVITYOFOXIDETONITRIDESOTHATNONITRIDEREMAINEDONTHEGATE．FROMDESIGNOFEXPERIMENTDOEDATA’WEGOTTHEPROCESSBOUNDARYFORTHESPACERETCHONDPSPLUS．WEDIDELECTRICALTESTSANDTHERESUITSCONFIRMEDTHATTHENEWPROCESSDEVELOPEDINTHISTHESISCAILMEETTHEPRODUCTREQUIREMENTS．KEYWORDSDRYETCH；SPACER；ETCHRATESELECTIVITY；BACKSIDEHELIUM；ETCHRATEUNIFORMITY；MAINETCH；OVERETCHCLASSIFICATIONCODETN42

簡介：上海交通大學工程碩士專業(yè)學位論文035UMCMOS工藝多頻點輸出鎖相環(huán)電路設計碩士研究生吳潔學號1112102009導師莫亭亭副導師姜自力申請學位工程碩士學科集成電路工程所在單位微電子學院答辯日期2013年12月授予學位單位上海交通大學上海交通大學上海交通大學上海交通大學上海交通大學學位論文版權使用授權書學位論文版權使用授權書學位論文版權使用授權書學位論文版權使用授權書本學位論文作者完全了解學校有關保留、使用學位論文的規(guī)定，同意學校保留并向國家有關部門或機構送交論文的復印件和電子版，允許論文被查閱和借閱。本人授權上海交通大學可以將本學位論文的全部或部分內容編入有關數(shù)據(jù)庫進行檢索，可以采用影印、縮印或掃描等復制手段保存和匯編本學位論文。保密保密□，在年解密后適用本授權書。本學位論文屬于不保密不保密□。（請在以上方框內打“√”）學位論文作者簽名指導教師簽名日期日期2013年12月26日

簡介：Y853A乏。飯旦大學碩士學位論文專業(yè)學位學校代碼學號0．18I_UN無邊距接觸孔干法刻蝕工藝的開發(fā)院系所信息科學與工程學院專業(yè)姓名指導教師完成日期電子與通信工程領域呂煜坤茹國平教授李文強2005年11月13日1024603302103LABSTRACTTHISTHESISMAINLYFOCUSESONTHEDEVELOPMENTOFDRYETCHINGPROCESSFOR0．1SUMBORDERLESSCONTACT．WITHOUTANYTRANSFERREDTECHNOLOGYREFERENCE，WESUCCESSFULLYDEVELOPEDNEWETCHPROCESSBYTAKINGUSEOFOURCOMPANY’SCURRENTMACHINESANDLOCALRESOURCE．ACCORDINGTOTHESPECIALREQUIREMENTSOFONLY0．OLUMMARGINBETWEENCONTACTANDPOLYORDI髓SIONIN0．18UMPROCESSFLOW,WEDISCOVEREDTHEDIFFICULTIESANDPROBLEMSBASINGONEXISTINGMACHINESANDPROCESSTECHNOLOGY．THEMAINPROBLEMSARETHEHIGHELECTRICALRESISTANCEANDDEVICELEAKAGE，WHICHAREMAINLYCAUSEDBYSILICIDEOVERETCHDUETOTHEPOORETCHSELECTIVITY．SOWEDOIMPROVEMENTSMAINLYINTWOAPPROACHESASFOLLOWS．FIRSTLY,WEDEVELOPEDANEWPROCESSWITHANOVELPREMETALDIELECTRICMULTILAYERSTRUCTUREANDEXPANDEDTHEETCHPROCESSWINDOWEFFECTIVELY．WEDEPOSITEDANETCHSTOPLAYERRIGHTAFTERSAIICIDEFORMATION．WECHOSESIONASTHEETCHSTOPLAYER，WHICHHASHIGHETCHRATEER、SELECTIVITYTOSI02SI02／SION，111EETCHOFVARIEDCONTACTSTRUCTURESCANBESTOPPEDONTHEETCHSTOPLAYERAFTEROXIDEETCHING．AFTERWARDSWECANETCHOFFTHEREMAININGETCHSTOPLAYER．TBISMETHODCANRESOLVEETCHLOSSVARIATIONINCONTACTSTRUCTURESWITHDIFFERENTCONTACTDEPTHS，INTHEMEANWHILEITCANALSOREDUCETHICKNESSVARIATIONINFLUENCECAUSEDBYFILMFORMATIONNONUNIFORMITY．SECONDLY，BYADJUSTINGTHEGASFLOWRATIOOFCSFGAND02，WEDEVELOPEDANEWETCHRECIPEWHICHHASHIGHERSELECTIVITYOFSI02TOSIONSOTHATTHEETCHCARLBESUCCESSFULLYSTOPPEDONTHEETCHSTOPLAYER．FROMDESIGNOFEXPERIMENTDOEDATA,WEGOTTHEPROCESSBOUNDARYFORTHEETCHSTOPINOXIDE，I．E，90％OFCSFS／02FLOWRATIO．FURTHERMOREWEDETERMINEDTHEETCHPROCESSWINDOWINWHICHBOTHTHEETCHSTOPINOXIDEANDPUNCHTHROUGHOFETCHSTOPLAYERCARLBEAVOIDED．FROMPROCEEDINGEXPERIMENTSANDOBTAINEDDATA,WEFINALLYDESIGNEDANEWSI02ETCHPROCESSWITHTWOSTEPS．INTHEFIRSTSTEP，WEUSEANETCHRECIPEWITHLOWSELECTIVITY,WHICHCB／IPREVENTTHEETCHSTOPINOXIDE；INTHESECONDSTEP，WEUSEANETCHRECIPEWITHHIGHSELECTIVITY,WHICHCANPREVENTPUNCHTHROUGHOFTHEUNDERLYINGETCHSTOPLAYER．BYTHISMETHOD，WECALLSIGNIFICANTLYEXPANDPROCESSWINDOWANDIMPROVETHEPROCESSSTABILITY．FINALLY,WEDIDELECTRICALTESTSANDFAILUREANALYSIS。ANDTHERESULTSCONFIRMEDTHATTHENEWPROCESSDEVELOPEDINTHISTHESISCALLMEETTHEPRODUCTREQUIREMENTS．KEYWORDSDRYETCH；BORDERLESSCONTACT；ETCHRATESELECTIVITY；OVERETCH；ETCHSTOPETCHSTOPLAYER

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簡介：上海交通大學碩士學位論文018ΜM光刻制程中顯影工藝的優(yōu)化碩士研究生吳敏學號1102102030導師榮國光副導師阮春軍申請學位工程碩士學科集成電路工程所在單位微電子學院答辯日期2013年5月12日授予學位單位上海交通大學上海交通大學上海交通大學上海交通大學上海交通大學學位論文原創(chuàng)性聲明學位論文原創(chuàng)性聲明學位論文原創(chuàng)性聲明學位論文原創(chuàng)性聲明本人鄭重聲明所呈交的學位論文018ΜM光刻制程中顯影工藝的優(yōu)化，是本人在導師的指導下，獨立進行研究工作所取得的成果。除文中已經(jīng)注明引用的內容外，本論文不包含任何其他個人或集體已經(jīng)發(fā)表或撰寫過的作品成果。對本文的研究做出重要貢獻的個人和集體，均已在文中以明確方式標明。本人完全意識到本聲明的法律結果由本人承擔。學位論文作者簽名日期年月日